description: the central semiconductor CMXD2004 type contains three (3) isolated high voltage silicon switching diodes, manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for applications requiring high voltage capability. marking code is x04. maximum ratings (t a =25c) symbol units continuous reverse voltage v r 240 v peak repetitive reverse voltage v rrm 300 v peak repetitive reverse current i o 200 ma continuous forward current i f 225 ma peak repetitive forward current i frm 625 ma forward surge current, tp=1 ms i fsm 4000 ma forward surge current, tp=1 s i fsm 1000 ma power dissipation p d 350 mw operating and storage junction temperature t j ,t stg 65 to +150 c thermal resistance ja 357 c/w electrical characteristics per diode (t a =25c unless otherwise noted) symbol test conditions min max unit i r v r =240v 100 na i r v r =240v, t a =150c 100 a bv r i r =100 a 300 v v f i f =100ma 1.0 v c t v r =0, f=1 mhz 5.0 pf t rr i f =i r =30ma, rec. to 3.0ma, r l =100 ? 50 ns CMXD2004 super-mini triple isolated surface mount high voltage switching diode sot-26 case central semiconductor corp. tm r1 ( 14-sept 2000)
lead code 1) anode 1 2) anode 2 3) anode 3 4) cathode 3 5) cathode 2 6) cathode 1 central semiconductor corp. tm mechanical outline - sot -26 case CMXD2004 super-mini triple isolated surface mount high voltage switching diode all dimensions in inches (mm) pin configuration r1 ( 14-sept 2000)
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